| PART |
Description |
Maker |
| LH540225 |
512 x 18 / 1024 x 18 Synchronous FIFO 512 ×一千?二十四分之一十八× 18同步FIFO
|
Sharp, Corp.
|
| IDT7280 IDT7280L IDT7280L12 IDT7280L12PA IDT7280L1 |
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9 DUAL 512 x 9DUAL 1024 x 9 DUAL 2048 x 9DUAL 4096 x 9 DUAL 8192 x 9
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9 DUAL 512 x 9 DUAL 1024 x 9
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9,DUAL 1,024 x 9, DUAL 2,048 x 9,DUAL 4,096 x 9, DUAL 8,192 x 9
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1024 x 9
|
IDT[Integrated Device Technology]
|
| 39LF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
| IDT72510 IDT72510L25J IDT72510L35J IDT72510L50J ID |
BUS-MATCHING BIDIRECTIONAL FIFO 512 x 18-BIT . 1024 x 9-BIT 1024 x 18-BIT . 2048 x 9-BIT
|
IDT[Integrated Device Technology]
|
| M29W800DB45N1E M29W800DB M29W800DB45M1E M29W800DB4 |
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
|
Numonyx B.V
|
| M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
| CY14B116S-BZ25XIES CY14B116N-ZSP45XIES CY14B116N-Z |
16 Mb (2048 K 8/1024 K 16/512 K 32) nvSRAM
|
Cypress
|
| M58PR512LE M58PR512LE96ZB5 M58PR256LE96ZB5 M58PR00 |
256-Mbit, 512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| AT24C08B-TH-B AT24C08B-TH-T AT24C04BY6-YH-T AT24C0 |
Two-wire Serial EEPROM 4K (512 x 8) 8K (1024 x 8)
|
ATMEL Corporation
|
| IDT723622 IDT723622L15PF IDT723622L15PQF IDT723622 |
CMOS SyncBiFIFOO 256 x 36 x 2/ 512 x 36 x 2/ 1024 x 36 x 2
CMOS SyncBiFIFOO 256 x 36 x 2, 512 x 36 x 2, 1024 x 36 x 2
CMOS SyncBiFIFOO 256 x 36 x 2 512 x 36 x 2 1024 x 36 x 2
|
IDT[Integrated Device Technology]
|
| SST37VF512_06 SST37VF010 SST37VF010-70-3C-NH SST37 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
|
Silicon Storage Technol...
SST[Silicon Storage Technology, Inc]
Silicon Storage Technology, Inc.
http://
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
